R450 Research MBE System The R450 MBE is a compact
R&D system suitable for III-V, II-VI, GaN and ZnO epitaxy……
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R600 Research MBE System The R600 MBE is a the next step up
from the R450 MBE system. Thegrowth chamber is optimized for III-V,
II-VI, GaN and ZnO epitaxy…… read more...
P600 Production MBE Systyem The
P600 MBE is the most advanced MBE system
for III-V or GaN epitaxy. The P600 MBE was originally designed for VCSEL production…..
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S600 Si/SiGe/Metal/Oxide MBE System
The SGC600 MBE was originally developed for the
Institute of Semiconductor Physics (IHP) in Frankfurt-Oder, Germany
in close collaboration…… read more...
S800 Si/SiGe/Metal/Oxide MBE System
The S800 system is based on the smaller S600 design.
The larger 800 mm diameter growth chamber is designed for 200 mm
substrate size…… read more...
S1000 Si/SiGe/Metal/Oxide MBE System
The S1000 system is the biggest system in our Si MBE
system range. The system is capable of growing on 300 mm silicon
substrates…… read more...
M600 Metal/Oxide MBE System The M600
metal MBE is a UHV evaporation system especially designed
for high quality deposition or epitaxial growth of metals,
oxides and metal sup..... read more...
