*** UHV Thin Film Deposition System ***

Advanced Microscopy
- 3D True Color Optical Imaging
- Acoustic Microscopy
- Confocal Laser Scanning Microscopy
- Electron Microscopy
- Infrared Microscopy
- Live Cell Imaging
- Industrial Optical Microscopy
- Scanning Probe Microscopy
Focused Ion Beam (FIB)
- Single Beam System
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- Double Beam System
- Triple Beam System
- Cross Beam System
- Neon
Microanalysis
- Electron Probe Micro-Analyzer (EPMA)
- Energy Dispersive Microanalysis System (EDS)
- Wavelength Dispersive Microanalysis System (WDS)
- Electron Backscattered Diffraction (EBSD)
Surface Metrology
- 3D True Colour Optical Profiler
- Stylus Profiler
- Non-contact optical Profiler
Semiconductor Metrology
- Industrial Optical Microscopy
- Infared Microscopy
- Defect Inspection, Review and ADC
- Macro and Micro Defect Review Tool
Surface Sciences
- Sector SIMS
- Time OF Flight SIMS
- Quadrapole SIMS
- LEIS
- LEXES
- Tomographic Atom Probe
UHV Thin Film Deposition
- Physical Vapor Deposition (PVD)
- Molecular Beam Epitaxy System (MBE)
Vacuum Solution
Workstations
- Imaging Workstation
- Fluorescence Workstation
- Live Cell Imaging Workstation
- Material Workstation
Sample Preparations
- Drying
- Coating
- Cryo transfer
- Cryo-fixation
- Freeze-etch & -fracture System
- Freeze Substitution System
- Glass Knife Maker & Diamond Knives
- Ultramicrotome
- Ultramicrotome With Cryo
- Microtome
- Automatic Tissue Processor
- Argon Ion Milling System

UHV Thin Film Deposition System

Contact & Support
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Molecular Beam Epitaxy

Molecular Beam Epitaxy (MBE) is an Ultra High Vacuum (UHV)-based technique for producing high quality epitaxial structures with monolayer (ML) control. In MBE, ultra-pure elements such as gallium and arsenic are heated in separate effusion cells until they each slowly begin to evaporate. The evaporated elements then condense on the wafer, where they may react with each other. In the example of gallium and arsenic, single-crystal gallium arsenide is formed.
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Physical Vapor Deposition (PVD)

Physical Vapor Deposition (PVD) is a process by which a thin film of material is deposited on a substrate according to the following sequence of steps: 1) the material to be deposited is converted into vapor by physical means; 2) the vapor is transported across a region of low pressure from its source to the substrate; and 3) the vapor undergoes condensation on the substrate to form the thin film. The DCA PVD techniques include magnetron sputtering, electron beam deposition and pulsed laser deposition, all under UHV conditions.
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