Used in the semiconductor industry for yield
enhancement during R&D, Technology Ramping and Mass
Production phases. Provides non-destructive quantitative
elemental measurements in the first few nanometers below the
surface on product wafers (scribe lines or small test pads).
Applications Include fast quantitation and uniformity
measurement of ultra- low energy implants, B, Ge and C in
SiGe, nitrogen-oxygen in ultra-thin oxynitride, and high-k
dielectric (Hf and Zr oxides).