Focused Ion Beam System

Focused Ion Beam System MI4050

The MI4050 High-Performance Focused Ion Beam System is equipped with new optics and provides the world-leading SIM imaging resolution and high-definition TEM sample preparation with improved imaging resolution at low kV. The MI4050 accommodates a variety of applications such as cross-section observation, circuit modification, vector scan processing, nano-micro patterning, nano molding, and 3D nano fabrication using deposition function.

Features

Greatly Reduced Processing Time Using the Big Probe Current (Maximum probe current 90 nA)

Cross-sectional processing of wire bonding (Processing size: W: 95 µm, D: 55 µm Machining time: 20 min)




Ultra Low Damaged TEM Sample Preparation by Low kV Processing (0.5 kV or higher) and improved Secondary Electron Image Resolution at Low kV (Less than 1 kV optional)


High Resolution SIM imaging (secondary electron image resolution 4 nm at 30 kV)

        
         Normal area                              Bent area
                                       Cross-section SIM image of aluminium can



High-Precision 5-Axis Motorized Mechanical Eucentric Stage

The eucentric stage enables the user to specify the coordinates more accurately to obtain finer alignment for imaging and continuous processing TEM sample preparation.
 
Ease of Use and Various Processing Mode

A variety of processing modes are available with simplified operation.

•  Programmed Cross Sectioning
•  Programmed TEM/ STEM Sample Preparation
•  Continuous Auto-Pilot Processing
•  Automated TEM Sample Preparation (A-TEM)
•  Bitmap Processing
•  Vector Scan Processing
•  3D Nano Structure Processing etc...

SIM Image 3D Reconstruction Analysis

Using SIM cross-section images which are obtained by equally spaced cross-sectioning and observation, 3D reconstruction analysis can be performed. It can also be used to visualize 3D information of dispersed state and hole of composite particle.
                
                                                        Example of Filler Distribution Analysis
                                                               in Semiconductor seal material

Circuit Modification using Multi-Gas Injection System (MGS II) (Optional)

A variety of gasses can be injected for circuit modification, wiring, passivation, insulator, enhanced etching, and more.

•  Tungsten deposition gas
•  Platinum deposition gas
•  Insulator deposition gas
•  XeF2 etching gas
•  Organic ething gas
•  Carbon deposition gas

High aspect ratio hole etching using XeF2 and W deposition

Variety of Coordinate Linkage Function (optional)

Hitachi High-Tech Science's proprietary coordinate linkage function offers fast and accurate coordination determination.

• Linkage between Optical Microscope and SIM image Double cursor   function (Japan Patent No.4634134, US Patent No. 7595488)
• Linkage of defect inspection and coordinate Linkage with partial wafer   and full wafer coordinate
• Linkage with CAD navigation system

Specifications

Sample size	Maximum 50 mm in size and 12 mm thick
Sample stage	5-axis motorized eucentric tilting stage
Accelerating Voltage	1 - 30 kV (0.5 kV - *optional) (0.5 - 1.0 kV : 0.1 kV step) (1.0 - 2.0 kV : 0.2 kV step)
SIM Resolution	4 nm@30 kV
Maximum Probe Current	90 nA
Maximum Current Density	50 A/cm2